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Samsung Demonstrates 3D Stacked FETs with Triple Nanosheet Channels at 42nm
(
semiconductor.samsung.com
)
19 points by
its_ajseven
4 days ago
|
4 comments
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armitron 18 minutes ago
[-]
This seems like it could accelerate the transition to sub-1nm nodes (previously projected to mid 2030s), maybe by the end of this decade.
RicoElectrico 38 minutes ago
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How about heat? Seems these days it's the heat above everything else that's the issue. And more density would only aggravate it.
ortusdux 29 minutes ago
[-]
I wonder if the proposed CPU/GPU laser cooling technique that was on here a few days ago would penetrate the Si layers?
https://news.ycombinator.com/item?id=48510375
arein3 31 minutes ago
[-]
What you loose in heat you gain in speed caused by proximity. Perhaps this will allow for lower voltage and thus less heat.
its_ajseven 4 days ago
[-]
[flagged]
Rendered at 17:10:37 GMT+0000 (Coordinated Universal Time) with Vercel.
https://news.ycombinator.com/item?id=48510375